Field Plate Ldmos

Research Article The Investigation of Field Plate Design in 500 V

Research Article The Investigation of Field Plate Design in 500 V

2017 29th International Symposium on Power Semiconductor Devices and

2017 29th International Symposium on Power Semiconductor Devices and

An improved SOI LDMOS with buried field plate - ScienceDirect

An improved SOI LDMOS with buried field plate - ScienceDirect

Extremely rugged 50 V LDMOS devices capture ISM and Broadcast markets

Extremely rugged 50 V LDMOS devices capture ISM and Broadcast markets

A Novel RF SOI LDMOS with a Raised Drift Region

A Novel RF SOI LDMOS with a Raised Drift Region

LATERAL POWER MOSFETS HARDENED AGAINST SINGLE EVENT RADIATION

LATERAL POWER MOSFETS HARDENED AGAINST SINGLE EVENT RADIATION

Multiple Trench Split-gate SOI LDMOS Integrated With Schottky Rectifier

Multiple Trench Split-gate SOI LDMOS Integrated With Schottky Rectifier

A Novel Resurf Stepped Oxide MOSFET with Slope Field Plate

A Novel Resurf Stepped Oxide MOSFET with Slope Field Plate

Numerical investigation of the total SOA of trench field-plate LDMOS

Numerical investigation of the total SOA of trench field-plate LDMOS

Ultra-Low Specific On-Resistance Trench SOI LDMOS with a Floating

Ultra-Low Specific On-Resistance Trench SOI LDMOS with a Floating

China High Power Rf Transistor, China High Power Rf Transistor

China High Power Rf Transistor, China High Power Rf Transistor

Extended-p Stepped Gate LDMOS for Improved Performance

Extended-p Stepped Gate LDMOS for Improved Performance

SEM cross-section photograph of the gate region  LDMOS has got a

SEM cross-section photograph of the gate region LDMOS has got a

Figure 5 from Application of field plate in SLOP-LDMOS - Semantic

Figure 5 from Application of field plate in SLOP-LDMOS - Semantic

Figure 10 from Integrated 85V rated complimentary LDMOS devices

Figure 10 from Integrated 85V rated complimentary LDMOS devices

A proposal of LDMOS using Deep Trench poly field plate

A proposal of LDMOS using Deep Trench poly field plate

Fully tensile strained partial silicon-on-insulator n-type lateral

Fully tensile strained partial silicon-on-insulator n-type lateral

Figure 3 from Numerical investigation of the total SOA of trench

Figure 3 from Numerical investigation of the total SOA of trench

High-Gain, SiC MESFETs Using Source-Connected Field Plates

High-Gain, SiC MESFETs Using Source-Connected Field Plates

Transistor Technologies for High Efficiency and Linearity

Transistor Technologies for High Efficiency and Linearity

PDF) Degradation analysis in SOI LDMOS transistors with steep

PDF) Degradation analysis in SOI LDMOS transistors with steep

P1 – Silicon Superjunction and GaN HEMT Power Devices

P1 – Silicon Superjunction and GaN HEMT Power Devices

Electronics | Free Full-Text | Evaluation of LDMOS Figure of Merit

Electronics | Free Full-Text | Evaluation of LDMOS Figure of Merit

Extremely Rugged 50 V LDMOS Devices Capture ISM and Broadcast

Extremely Rugged 50 V LDMOS Devices Capture ISM and Broadcast

A Low Switching Loss 40 V Dual RESURF LDMOS Transistor with Low

A Low Switching Loss 40 V Dual RESURF LDMOS Transistor with Low

Ultra-Low Specific On-Resistance Trench SOI LDMOS with a Floating

Ultra-Low Specific On-Resistance Trench SOI LDMOS with a Floating

Ultra-Low Specific On-Resistance Trench SOI LDMOS with a Floating

Ultra-Low Specific On-Resistance Trench SOI LDMOS with a Floating

Optimisation of low voltage Field Plate LDMOS transistors | I

Optimisation of low voltage Field Plate LDMOS transistors | I

Design considerations of high voltage RESURF nLDMOS: An analytical

Design considerations of high voltage RESURF nLDMOS: An analytical

Design of a Reliable p-Channel LDMOS FET With RESURF Technology

Design of a Reliable p-Channel LDMOS FET With RESURF Technology

Low Switching Loss and Scalable 20-40 V LDMOS Transistors with Low

Low Switching Loss and Scalable 20-40 V LDMOS Transistors with Low

Double trenches LDMOS with trapezoidal gate

Double trenches LDMOS with trapezoidal gate

Extremely Rugged 50 V LDMOS Devices Capture ISM and Broadcast

Extremely Rugged 50 V LDMOS Devices Capture ISM and Broadcast

LDMOS technology for RF power amplifiers

LDMOS technology for RF power amplifiers

Patent Report: | US10141440 | Drift-region field control of an LDMOS

Patent Report: | US10141440 | Drift-region field control of an LDMOS

2017 29th International Symposium on Power Semiconductor Devices and

2017 29th International Symposium on Power Semiconductor Devices and

200-V High-side thick-layer SOI field p-channel LDMOS with multiple

200-V High-side thick-layer SOI field p-channel LDMOS with multiple

Extremely rugged 50 V LDMOS devices capture ISM and Broadcast markets

Extremely rugged 50 V LDMOS devices capture ISM and Broadcast markets

An L-shaped low on-resistance current path SOI LDMOS with dielectric

An L-shaped low on-resistance current path SOI LDMOS with dielectric

Schematic cross section of the LDMOS boost transistor  The field

Schematic cross section of the LDMOS boost transistor The field

A low on-resistance buried current path SOI p-channel LDMOS

A low on-resistance buried current path SOI p-channel LDMOS

Ultralow specific ON-resistance high-k LDMOS with vertical field

Ultralow specific ON-resistance high-k LDMOS with vertical field

A proposal of LDMOS using Deep Trench poly field plate

A proposal of LDMOS using Deep Trench poly field plate

Simulation-based performance analysis of an ultra-low specific on

Simulation-based performance analysis of an ultra-low specific on

Extended-p Stepped Gate (ESG) LDMOS for Improved Performance

Extended-p Stepped Gate (ESG) LDMOS for Improved Performance

Ultralow specific ON-resistance high-k LDMOS with vertical field

Ultralow specific ON-resistance high-k LDMOS with vertical field

P1 – Silicon Superjunction and GaN HEMT Power Devices

P1 – Silicon Superjunction and GaN HEMT Power Devices

Patent US6531355 - LDMOS device with self-aligned RESURF region

Patent US6531355 - LDMOS device with self-aligned RESURF region

Research Article The Investigation of Field Plate Design in 500 V

Research Article The Investigation of Field Plate Design in 500 V

Improvement of SOI Trench LDMOS Performance With Double Vertical

Improvement of SOI Trench LDMOS Performance With Double Vertical

Electronics | Free Full-Text | Evaluation of LDMOS Figure of Merit

Electronics | Free Full-Text | Evaluation of LDMOS Figure of Merit

Simulated electric field distribution for the high voltage RF LDMOS

Simulated electric field distribution for the high voltage RF LDMOS

Figure 2 from A proposal of LDMOS using Deep Trench poly field plate

Figure 2 from A proposal of LDMOS using Deep Trench poly field plate

S-Band Radar LDMOS Transistors EuMW2009

S-Band Radar LDMOS Transistors EuMW2009

GaN Power Amplifiers for Next Generation Mobile Base-Station

GaN Power Amplifiers for Next Generation Mobile Base-Station

N-Channel laterally diffused metal oxide semiconductor or vertically

N-Channel laterally diffused metal oxide semiconductor or vertically

I–V characteristics of LDMOS transistor with a total gatewidth of

I–V characteristics of LDMOS transistor with a total gatewidth of

Figure 4 from Improvement of electrical characteristics in LDMOS by

Figure 4 from Improvement of electrical characteristics in LDMOS by

US20140231911A1 - Ldmos device with double-sloped field plate

US20140231911A1 - Ldmos device with double-sloped field plate

Transistor Technologies for High Efficiency and Linearity

Transistor Technologies for High Efficiency and Linearity

A novel high performance LDMOS transistor with high channel density

A novel high performance LDMOS transistor with high channel density

A novel high performance LDMOS transistor with high channel density

A novel high performance LDMOS transistor with high channel density

PDF) A 200 V silicon-on-sapphire LDMOS structure with a step oxide

PDF) A 200 V silicon-on-sapphire LDMOS structure with a step oxide

Optimization And Analysis Of High Reliability 30-50V Dual RESURF LDMOS

Optimization And Analysis Of High Reliability 30-50V Dual RESURF LDMOS

Extended-p Stepped Gate (ESG) LDMOS for Improved Performance

Extended-p Stepped Gate (ESG) LDMOS for Improved Performance

The future of solid-state transistors - ppt video online download

The future of solid-state transistors - ppt video online download

Extended-p Stepped Gate (ESG) LDMOS for Improved Performance

Extended-p Stepped Gate (ESG) LDMOS for Improved Performance

Comparing GaN-on-SiC Power Transistor Technology with GaAs and Si

Comparing GaN-on-SiC Power Transistor Technology with GaAs and Si

2017 29th International Symposium on Power Semiconductor Devices and

2017 29th International Symposium on Power Semiconductor Devices and

An improved SOI LDMOS with buried field plate - ScienceDirect

An improved SOI LDMOS with buried field plate - ScienceDirect

Linearity and speed optimization in SOI LDMOS using gate engineering

Linearity and speed optimization in SOI LDMOS using gate engineering

EP2321850B1 - LDMOS having a field plate - Google Patents

EP2321850B1 - LDMOS having a field plate - Google Patents

RF LDMOS Power Transistor Technology For Pulsed L-Band Transmitters

RF LDMOS Power Transistor Technology For Pulsed L-Band Transmitters

A Novel Resurf Stepped Oxide MOSFET with Slope Field Plate

A Novel Resurf Stepped Oxide MOSFET with Slope Field Plate

Open Access proceedings Journal of Physics: Conference series

Open Access proceedings Journal of Physics: Conference series

Academic OneFile - Document - Improving breakdown voltage for a

Academic OneFile - Document - Improving breakdown voltage for a

Ultralow specific ON-resistance high-k LDMOS with vertical field plate

Ultralow specific ON-resistance high-k LDMOS with vertical field plate

P1 – Silicon Superjunction and GaN HEMT Power Devices

P1 – Silicon Superjunction and GaN HEMT Power Devices

LDMOS Power Transistors Drive 200 W to 1300 MHz | Microwaves & Radio

LDMOS Power Transistors Drive 200 W to 1300 MHz | Microwaves & Radio

Ultra-Low Specific On-Resistance Trench SOI LDMOS with a Floating

Ultra-Low Specific On-Resistance Trench SOI LDMOS with a Floating

Influence of interface state charges on RF performance of LDMOS

Influence of interface state charges on RF performance of LDMOS

Improvement of SOI Trench LDMOS Performance With Double Vertical

Improvement of SOI Trench LDMOS Performance With Double Vertical

A Novel Vertical Field Plate Lateral Device With Ultralow Specific

A Novel Vertical Field Plate Lateral Device With Ultralow Specific

Simulation-based performance analysis of an ultra-low specific on

Simulation-based performance analysis of an ultra-low specific on

A Novel Vertical Field Plate Lateral Device With Ultralow Specific

A Novel Vertical Field Plate Lateral Device With Ultralow Specific

Figure 1 from Improvement of electrical characteristics in LDMOS by

Figure 1 from Improvement of electrical characteristics in LDMOS by

GaN/SiC based High Electron Mobility Transistors for integrated

GaN/SiC based High Electron Mobility Transistors for integrated